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  NJG1146KG1 - 1 - ver.2011-03-17 wide band low noise amplifier gaas mmic    general description    package outline the NJG1146KG1 is a fully matched wide band low noi se amplifier gaas mmic for digital tv applications. to achieve wide dynamic range, the NJG1146KG1 offer s high gain mode and low gain mode. selecting high ga in mode for weak signals, the NJG1146KG1 helps improve rece iver sensitivity through high gain and low noise figure. selecting low gain mode for strong signals, it bypa sses lna circuit to offer higher linearity. an small and ultra-thin package of eson6-g1 is adop ted.    features  operating frequency 40mhz~900mhz  operating voltage 5.0v typ.  package size eson6-g1 (package size: 1.6mm x 1.6mm x 0.397mm typ.) [high gain mode]  operating current 60ma typ.  gain 12.0db typ.  noise figure 2.2db typ.  im2 52.0db typ.  im3 80.0db typ. [low gain mode]  low current consumption 30 a typ.  gain(low loss) -1.0db typ.    pin configuration    truth table h=v ctl(h) l=v ctl(l) v ctl lna on bypass lna mode h on off high gain mode l off on low gain mode NJG1146KG1 pin connection 1. rfout1 2. nc(gnd) 3. rfout2 4. rfin 5. gnd 6. vctl *exposed pad: gnd (top view) 3 4 logic circuit bias circuit 5 6 2 1 rfout1 nc (gnd) rfout2 rfin gnd vctl 1pin index note: specifications and description listed in this datasheet are subject to change without notice.
NJG1146KG1 - 2 -    absolute maximum ratings t a =+25c, z s =z l =50 ohm parameter symbol conditions ratings units drain voltage v dd 6.0 v control voltage v ctl 6.0 v input power p in v dd =5.0v +10 dbm power dissipation p d 4-layer fr4 pcb with through-hole (101.5x114.5mm), t j =150c 1200 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+150 c  electrical characteristics1 (dc characteristics) v dd =5.0v, t a =+25c, with application circuit parameters symbol conditions min typ max units operating voltage v dd 2.4 5.0 5.5 v control voltage (high) v ctl(h) 1.3 1.8 5.5 v control voltage (low) v ctl(l) 0.0 0.0 0.5 v operating current1 i dd 1 rf off, v ctl =1.8v - 60 80 ma operating current2 i dd 2 rf off, v ctl =0v - 30 50 a control current i ctl rf off, v ctl =1.8v - 6 12 a
NJG1146KG1 - 3 -    electrical characteristics2 (high gain mode) v dd =5.0v, v ctl =1.8v, freq=40~900mhz, t a =+25c, z s =z l =50 ohm, with application circuit parameters symbol conditions min typ max units small signal gain1 gain1 exclude pcb & connector losses *1 9.0 12.0 14.0 db noise figure1_1 nf1_1 freq=40~80mhz, exclude pcb & connector losses *2 - 2.5 4.0 db noise figure1_2 nf1_2 freq=80~900mhz, exclude pcb & connector losses *2 - 2.2 3.0 db input power at 1db gain compression point1 p -1db(in) 1 +0.0 +6.0 - dbm input 3rd order intercept point1 iip3_1 f1=freq, f2=freq+100khz, p in =-12dbm +16.0 +22.0 - dbm 2nd order intermodulation distortion1 im2_1 f1=200mhz, f2=500mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 42.0 52.0 - db 3rd order intermodulation distortion1 im3_1 f1=600mhz, f2=650mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 55.0 80.0 - db isolation isl1 s12 - -17.0 -13.0 db rf in return loss1 rli1 7.0 10.0 - db rf out return loss1 rlo1 7.0 10.0 - db *1 input & output pcb and connector losses: 0.014db (40mhz), 0.088db(620mhz), 0.121db(900mhz) *2 input pcb and connector losses: 0.007db(40mhz), 0.011db(80mhz), 0.044db(620mhz), 0.060db(900mhz) *3 definitions of im2 and im3. frequency(mhz) pout(dbm) 600/650 700 im3 frequency(mhz) pout(dbm) 200 500 700 im2
NJG1146KG1 - 4 -    electrical characteristics3 (high gain mode) v dd =5.0v, v ctl =1.8v, freq=40~900mhz, t a =+25c, z s =z l =75 ohm, with application circuit parameters symbol conditions min typ max units small signal gain75 gain75 exclude pcb & connector losses *1 - 12.0 - db composite second order cso 74channels *4, cw p in =+15dbmv fmeas=295.25mhz, - -56 - dbc composite triple beat ctb 74channels *4, cw p in =+15dbmv fmeas=295.25 1.25mhz, - -81 - dbc cross modulation xmod 74channels *4, modulation p in =+15dbmv fmeas=295.25 15.75khz, - -80 - dbc rf in return loss75 rli75 - 15 - db rf out return loss75 rlo75 - 15 - db *1 input & output pcb and connector losses: 0.014db (40mhz), 0.088db(620mhz), 0.121db(900mhz) *4 74channels: ch1~c63(91.25~463.25mhz 6mhz step) a nd u13~u25(471.25~543.25mhz 6mhz step) except ch7(189.25mhz) , c28(253.25mhz)
NJG1146KG1 - 5 -    electrical characteristics4 (low gain mode) v dd =5.0v, v ctl =0v, freq=40~900mhz, t a =+25c, z s =z l =50 ohm, with application circuit parameters symbol conditions min typ max units small signal gain2 gain2 exclude pcb & connector losses *1 -2.5 -1.0 - db input power at 1db gain compression point2 p -1db(in) 2 +10.0 +16.0 - dbm input 3rd order intercept point2 iip3_2 f1=freq, f2=freq+100khz, p in =-2dbm +25.0 +33.0 - dbm 2nd order intermodulation distortion1 im2_2 f1=200mhz, f2=500mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 40.0 60.0 - db 3rd order intermodulation distortion1 im3_2 f1=600mhz, f2=650mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 48.0 70.0 - db rf in return loss2 rli2 8.0 15.0 - db rf out return loss2 rlo2 8.0 15.0 - db *1 input & output pcb and connector losses: 0.014db (40mhz), 0.088db(620mhz), 0.121db(900mhz) *3 definitions of im2 and im3. frequency(mhz) pout(dbm) 600/650 700 im3 frequency(mhz) pout(dbm) 200 500 700 im2
NJG1146KG1 - 6 -    terminal information no. symbol description 1 rfout1 at the high gain mode, rf output terminal. this terminal doubles as the drain terminal of the lna. please connect this terminal to the power supply(vdd) via inductor(l1). 2 nc(gnd) no connected terminal. this terminal is not connect ed with internal circuit. 3 rfout2 at the low gain mode, rf output terminal. please co nnect this terminal with rfout1 terminal through dc blocking c apacitor(c2) shown in the application circuit. 4 rfin rf input terminal. external capacitor c1 is require d to block the dc bias voltage of internal circuit. 5 gnd ground terminal. this terminal should be connected to the ground plane as close as possible for excellent rf perform ance. 6 vctl control voltage terminal. exposed pad gnd ground terminal. please connect exposed pad with gnd by using the plated through holes.
NJG1146KG1 - 7 -    electrical characteristics (high gain mode) conditions: v dd =5.0v, v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit -30 -25 -20 -15 -10 -5 0 5 10 15 20 -40 -30 -20 -10 0 10 pout vs. pin (f=620mhz) pout (dbm) pin (dbm) pout p-1db(in)=+7.7dbm 2 4 6 8 10 12 14 30 40 50 60 70 80 90 -40 -30 -20 -10 0 10 gain, i dd vs. pin (f=620mhz) gain (db) i dd (ma) pin (dbm) i dd gain p-1db(in)=+7.7dbm -80 -60 -40 -20 0 20 40 -40 -30 -20 -10 0 10 20 30 pout, im3 vs. pin (f1=620mhz, f2=620.1mhz) pout, im3 (dbm) pin (dbm) pout im3 iip3=+24.3dbm oip3=+36.1dbm 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 nf, gain vs. frequency nf (db) gain (db) frequency (mhz) gain nf (exclude pcb, connector losses) 4 5 6 7 8 9 10 11 12 0 500 1000 1500 2000 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (mhz) p-1db(in) 15 20 25 30 35 40 0 500 1000 1500 2000 iip3, oip3 vs. frequency (f1=frequency, f2=f1+100khz, pin=-12dbm) iip3, oip3 (dbm) frequency (mhz) oip3 iip3
NJG1146KG1 - 8 -    electrical characteristics (high gain mode) conditions: v dd =5.0v, v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit s11, s22 (f=10mhz~3ghz) s21, s12 (f=10mhz~3ghz) vswr (f=10mhz~3ghz) zin, zout (f=10mhz~3ghz)
NJG1146KG1 - 9 -    electrical characteristics (high gain mode) conditions: v dd =5.0v, v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) 0 10 20 30 40 50 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) 0 1 2 3 4 5 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz)
NJG1146KG1 - 10 -    electrical characteristics (high gain mode) conditions: v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit 0 10 20 30 40 50 60 70 80 2 2.5 3 3.5 4 4.5 5 5.5 6 i dd vs. v dd (rf off) i dd (ma) v dd (v) i dd 0 2 4 6 8 10 12 14 16 2 2.5 3 3.5 4 4.5 5 5.5 6 gain vs. v dd (f=620mhz) gain (db) v dd (v) gain 0 0.5 1 1.5 2 2.5 3 3.5 4 2 2.5 3 3.5 4 4.5 5 5.5 6 nf vs. v dd nf (db) v dd (v) nf(at 620mhz) nf(at 40mhz) 0 5 10 15 20 2 2.5 3 3.5 4 4.5 5 5.5 6 rli, rlo vs. v dd (f=620mhz) rli, rlo (db) v dd (v) rlo rli -10 -5 0 5 10 2 2.5 3 3.5 4 4.5 5 5.5 6 p-1db(in) vs. v dd (f=620mhz) p-1db(in) (dbm) v dd (v) p-1db(in) 0 5 10 15 20 25 30 35 40 2 2.5 3 3.5 4 4.5 5 5.5 6 iip3, oip3 vs. v dd (f1=620mhz, f2=620.1mhz, pin=-12dbm) iip3, oip3 (dbm) v dd (v) oip3 iip3
NJG1146KG1 - 11 -    electrical characteristics (high gain mode) conditions: v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit 0 10 20 30 40 50 60 70 80 2 2.5 3 3.5 4 4.5 5 5.5 6 im2 vs. v dd (f1=200mhz, f2=500mhz, fmeas=700mhz, pin1=pin2=-15d bm) im2 (db) v dd (v) im2 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 6 im3 vs. v dd (f1=600mhz, f2=650mhz, fmeas=700mhz, pin1=pin2=-15d bm) im3 (db) v dd (v) im3 0 10 20 30 40 50 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) v dd =2.4v v dd =5.0v v dd =6.0v 0 1 2 3 4 5 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) v dd =2.4v v dd =5.0v v dd =6.0v
NJG1146KG1 - 12 -    electrical characteristics (high gain mode) conditions: v dd =5.0v, v ctl =1.8v, z s =z l =50 ohm, with application circuit 0 10 20 30 40 50 60 70 80 -40 -20 0 20 40 60 80 100 i dd vs. ta (rf off) i dd (ma) ta ( o c) i dd 0 2 4 6 8 10 12 14 16 -40 -20 0 20 40 60 80 100 gain vs. ta (f=620mhz) gain (db) ta ( o c) gain 0 1 2 3 4 5 6 -40 -20 0 20 40 60 80 100 nf vs. ta nf (db) ta ( o c) nf(at 620mhz) nf(at 40mhz) 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 p-1db(in) vs. ta (f=620mhz) p-1db(in) (dbm) ta ( o c) p-1db(in) 0 5 10 15 20 25 30 35 40 -40 -20 0 20 40 60 80 100 iip3, oip3 vs. ta (f1=620mhz, f2=620.1mhz, pin=-12dbm) iip3, oip3 (dbm) ta ( o c) oip3 iip3 0 1 2 3 4 5 6 0 200 400 600 800 1000 nf vs. frequency nf (db) frequency (mhz) ta=+85 o c ta=+25 o c ta=-40 o c
NJG1146KG1 - 13 -    electrical characteristics (high gain mode) conditions: v dd =5.0v, v ctl =1.8v, z s =z l =50 ohm, with application circuit 0 5 10 15 20 -40 -20 0 20 40 60 80 100 rli, rlo vs. ta (f=620mhz) rli, rlo (db) ta ( o c) rlo rli 0 10 20 30 40 50 60 70 80 -40 -20 0 20 40 60 80 100 im2 vs. ta (f1=200mhz, f2=500mhz, fmeas=700mhz, pin1=pin2=-15d bm) im2 (db) ta ( o c) im2 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 im3 vs. ta (f1=600mhz, f2=650mhz, fmeas=700mhz, pin1=pin2=-15d bm) im3 (db) ta ( o c) im3 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 i dd vs. v ctl i dd (ma) v ctl (v) +85 o c +75 o c +50 o c +25 o c 0 o c -25 o c -40 o c 0 10 20 30 40 50 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) ta=+25 o c ta=+85 o c ta=-40 o c 0 1 2 3 4 5 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) ta=-40 o c ta=+25 o c ta=+85 o c
NJG1146KG1 - 14 -    electrical characteristics (low gain mode) conditions: v dd =5.0v, v ctl =0v, ta=25c, z s =z l =50 ohm, with application circuit -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -40 -30 -20 -10 0 10 20 pout vs. pin (f=620mhz) pout (dbm) pin (dbm) pout p-1db(in)=+18.0dbm -5 -4 -3 -2 -1 0 0 2 4 6 8 10 -40 -30 -20 -10 0 10 20 gain, i dd vs. pin (f=620mhz) gain (db) i dd (ma) pin (dbm) i dd gain p-1db(in)=+18.0bm -100 -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 30 40 pout, im3 vs. pin (f1=620mhz, f2=620.1mhz) pout, im3 (dbm) pin (dbm) pout im3 iip3=+37.1dbm oip3=+36.2dbm -10 -8 -6 -4 -2 0 0 500 1000 1500 2000 gain vs. frequency gain (db) frequency (mhz) gain (exclude pcb, connector losses) 15 16 17 18 19 20 0 500 1000 1500 2000 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (mhz) p-1db(in) 25 30 35 40 0 500 1000 1500 2000 iip3, oip3 vs. frequency (f1=frequency , f2=f1+100khz, pin=-2dbm) iip3, oip3 (dbm) frequency (mhz) oip3 iip3
NJG1146KG1 - 15 -    electrical characteristics (low gain mode) conditions: v dd =5.0v, v ctl =0v, ta=25c, z s =z l =50 ohm, with application circuit s11, s22 (f=10mhz~3ghz) s21, s12 (f=10mhz~3ghz) vswr (f=10mhz~3ghz) zin, zout (f=10mhz~3ghz)
NJG1146KG1 - 16 -    electrical characteristics (low gain mode) conditions: v dd =5.0v, v ctl =0v, ta=25c, z s =z l =50 ohm, with application circuit s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) 0 10 20 30 40 50 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) 0 1 2 3 4 5 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz)
NJG1146KG1 - 17 -    electrical characteristics (low gain mode) conditions: v dd =5.0v, v ctl =0v, z s =z l =50 ohm, with application circuit 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 i dd vs. ta (rf off) i dd ( a) ta ( o c) i dd -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 -40 -20 0 20 40 60 80 100 gain vs. ta (f=620mhz) gain (db) ta ( o c) gain 14 16 18 20 22 24 -40 -20 0 20 40 60 80 100 p-1db(in) vs. ta (f=620mhz) p-1db(in) (dbm) ta ( o c) p-1db(in) 30 32 34 36 38 40 -40 -20 0 20 40 60 80 100 iip3, oip3 vs. ta (f1=620mhz, f2=620.1mhz, pin=-2dbm) iip3, oip3 (dbm) ta ( o c) oip3 iip3 0 5 10 15 20 -40 -20 0 20 40 60 80 100 rli, rlo vs. ta (f=620mhz) rli, rlo (db) ta ( o c) rlo rli
NJG1146KG1 - 18 -    electrical characteristics (low gain mode) conditions: v dd =5.0v, v ctl =0v, z s =z l =50 ohm, with application circuit 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 im3 vs. ta (f1=600mhz, f2=650mhz, fmeas=700mhz, pin1=pin2=0dbm ) im3 (db) ta ( o c) im3 0 10 20 30 40 50 60 70 80 -40 -20 0 20 40 60 80 100 im2 vs. ta (f1=200mhz, f2=500mhz, fmeas=700mhz, pin1=pin2=0dbm ) im2 (db) ta ( o c) im2 0 10 20 30 40 50 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) ta=-40 o c ta=+25 o c ta=+85 o c 0 1 2 3 4 5 0 5000 10000 15000 20000 k-factor vs. frequency k-factor frequency (mhz) ta=-40 o c ta=+25 o c ta=+85 o c
NJG1146KG1 - 19 -    application circuit    test pcb layout precautions  c1~c3 are dc-blocking capacitors, and l1 is a dc-f eed inductor, and c4 is a bypass capacitor.  l1 is an rf choke. (dc feed inductor)  please connect exposed pad with gnd by using the p lated through hole.  in order not to couple with terminal rfin and rfou t, please layout ground pattern under the ic.  all external parts are placed as close as possibl e to the ic. parts id. manufacturer l1 taiyo-yuden hk1608 series c1~c4 murata grm15 series r1 koa rk73b series parts list v dd v ctl c1 c2 c3 l1 rf in rf out c4 r1 1pin index pcb (fr-4): t=0.2mm microstrip line width =0.40mm (z 0 =50 ohm) pcb size=16.8mm x 16.8mm rf in v ctl 3 4 logic circuit bias circuit 5 6 2 1 rf out v dd rfout1 nc (gnd) rfout2 rfin gnd vctl r1 680 ohm c1 0.01 f c2 0.01 f l1 470nh c3 0.01 f c4 0.01 f 1pin index (top view)
NJG1146KG1 - 20 -    measurement block diagram calibration setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and nf analyzer are connected directly. measurement setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and dut, dut and nf analyzer are connected directly. dut in out measuring instruments nf analyzer : agilent 8973a noise source : agilent 346a setting the nf analyzer measurement mode form device under test : amplifier system downconverter : off mode setup form sideband : lsb averages : 16 average mode : point bandwidth : 4mhz loss comp : off tcold : setting the temperature of noise source (30 3.15k)
NJG1146KG1 - 21 -    package outline (eson14-d7) b a s 1 . 6 0 0 .0 5 0.10 m s a 1. 6 0 0 . 0 5 0.10 m s b 0.075 s 0.05 s 0 . 39 7 0 . 0 3 0 0. 0 1 0 1 . 2 0 +0.06 -0.04 0. 5 0 . 5 0 . 2 6 +0.06 -0.04 0.05 m s ab 3 - r 0 . 2 c 0. 2 0 . 6 8 +0.06 -0.04 0 . 2 1 +0.06 -0.04 +0.010 -0.008 please connect to gnd unit :mm substrate :cu terminal treat :snbi molding material :epoxy resin weight :0.0035 (g) caution s on using this product this product contains gallium-arsenide (gaas) wh ich is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this pro duct. ? to wast e th is product, please obey the relati ng law of your country. this product may be damaged with electric static di scharge (esd) or spike voltage. p lease hand le with care to avoid these damages . [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.


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